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Updated at 15/12/2025 10:30:15(UTC+8)

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Description

The IXEL40N400 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 380000 mW. It has a maximum collector emitter voltage of 4000 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -40 °C to 150 °C.

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IXEL40N400 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	ISOPLUSi5-Pak
Power Dissipation	380000 mW
Breakdown Voltage (Collector to Emitter)	4000 V
Input Power (Max)	380 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	380000 mW
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Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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SN:H1.79705LO31661V37Q0QC0S0

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Part No IXEL40N400

Manufacturer IXYS Semiconductor

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