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MHT1008NT1 - NXP
Manufacturer:
NXP
ManyChip's Part#:
MC90740800
Category:
BJT Transistor, BJT
RoHS:
Lead free / RoHS Compliant
Datasheet:
Datasheet 3D Model
Description:
RF Power Transistor,2450 to 2450MHz, 12.5W, Typ Gain in dB is 18.6 @ 2450MHz, 28V, LDMOS, SOT1811
Stock Locations:
Availability:
1,265 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 9.71

Updated at 16/12/2025 10:30:15(UTC+8)

Certifications

ManyChip is committed to product quality and safety with ISO 9001, ISO 13485, ISO 45001, UL, RoHS, CQC and REACH certifications.

Description

Overview
The MHT1008N 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.
For additional information contact NXP® Semiconductor.
MoreLess
## Features
* Characterized with series equivalent large-signal impedance parameters and common source S-parameters
* Qualified for operation at 32 Vdc
* Integrated ESD protection
* 150°C case operating temperature
* 150°C die temperature capability
* RoHS Compliant
**Typical Applications**
* Consumer cooking as PA driver
* Commercial cooking as PA driver
## Features RF Performance Tables
### Typical Performance
VDD = 28 Vdc, IDQ = 110 mA*Frequency
(MHz)* | **Signal Type** | **Gps
(dB)* | **PAE
(%)* | **Pout
(W)*
\---|---|---|---|---
2400| CW| 18.5| 57.5| 12.5
2450| 18.6| 56.3| 12.5
2500| 18.3| 55.6| 12.5
### Load Mismatch/Ruggedness
**Frequency
(MHz)* | **Signal Type** | **VSWR** | **Pin
(W)* | **Test
Voltage* | **Result**
\---|---|---|---|---|---
2450| CW| > 5:1
at all Phase Angles| 26
(3 dB Overdrive)| 32| No Device Degradation

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MHT1008NT1 Specifications

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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- Please confirm product specifications when ordering.
- MOQ refers to the minimum order quantity required to purchase each part.
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- Decapsulation control
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- XRF inspection
- Electrical testing
- Surface testing
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